tsm9435 30v p - channel mosfet 1 / 6 version: b 07 sop - 8 features advance trench process technology high density cell design for ultra low on - resistance application load switch pa switch ordering information part no. package packing tsm9435cs rf sop - 8 2.5kpcs / 13 reel absolute max imum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds - 30 v gate - source voltage v gs 20 v continuous drain current, v gs @4.5v. i d - 5.3 a pulsed drain current, v gs @4.5v i dm - 20 a continuous source cu rrent (diode conduction) a,b i s - 1.9 a ta = 25 o c 2.5 maximum power dissipation ta = 70 o c p d 1.3 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter sy mbol limit unit junction to case thermal resistance r? jc 30 o c/w junction to ambient thermal resistance (pcb mounted) r? ja 50 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. product summary v ds (v) r ds(on) (m) i d (a) 60 @ v gs = 10v - 5.3 - 30 90 @ v gs = 4.5v - 4 .2 block diagram p - channel mosfet pin definition : 1. source 2. source 3. source 4. gate 5, 6, 7, 8. drain
tsm9435 30v p - channel mosfet 2 / 6 version: b 07 electrical specifications parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = - 250ua bv dss - 30 -- -- v gate threshold voltage v ds = v gs , i d = - 250a v gs(th) - 1.0 - 1.5 - 3.0 v gate body leakage v gs = 20 v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v d s = - 24 v, v gs = 0v i dss -- -- - 1.0 a on - state drain current a v ds = - 5v, v gs = - 10v i d(on) - 6 -- -- a v gs = - 10v, i d = - 5.3a -- 50 60 drain - source on - state resistance a v gs = - 4.5v, i d = - 4.2a r ds(on) -- 75 90 m forward transconductance a v ds = - 1 5v, i d = - 5 .3 a g fs 4 7 -- s diode forward voltage i s = - 1.9a, v gs = 0v v sd -- - 0.8 - 1.3 v dynamic b total gate charge q g -- 9.52 gate - sou rce charge q gs -- 3.43 -- gate - drain charge v ds = - 15v, i d = - 5. 3a, v gs = - 10v q gd -- 1.71 -- nc input capacitance c iss -- 551.57 -- output capacitance c oss -- 90.96 -- reverse transfer capacitance v ds = - 15v, v gs = 0v, f = 1.0mhz c rss -- 60.79 -- pf switching c turn - on delay ti me t d(on) -- 10.8 -- turn - on rise time t r -- 2.33 -- turn - off delay time t d(off) -- 22.53 -- turn - off fall time v dd = - 15v, r l = 15 , i d = - 1a, v gen = - 10v, r g = 6 t f -- 3.87 -- ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subj ect to production testing. b. switching time is essentially independent of operating temperature.
tsm9435 30v p - channel mosfet 3 / 6 version: b 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm9435 30v p - channel mosfet 4 / 6 version: b 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage single pul se power normalized thermal transient impedance, junction - to - ambient
tsm9435 30v p - channel mosfet 5 / 6 version: b 07 sop - 8 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code sop - 8 dimension millimeters inches dim min max min max. a 4.80 5.00 0.189 0.196 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 0.049 g 1.27bsc 0.05bsc k 0.10 0.25 0.004 0.009 m 0 7 0 7 p 5.80 6.20 0.229 0.244 r 0.25 0.50 0.010 0.019
tsm9435 30v p - channel mosfet 6 / 6 version: b 07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracie s. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk a nd agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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